uClamp2512T
uClamp®2512T TVS diode is specifically designed to meet the performance requirements of Gigabit Ethernet interfaces. They are designed to protect sensitive PHY chips from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The uClamp2512T is constructed using Semtech’s low voltage EPD process technology. The EPD process provides low operating voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes.
功能
- High ESD withstand voltage: +/-30kV (Contact/Air) per IEC 61000-4-2
- Able to withstand over 1000 ESD strikes per IEC 61000-4-2 Level 4
- Flow-through design simplifies layout
- Protects two line pairs
- Low reverse current: 10nA typical (VR=2.5V)
- Low variation in capacitance vs. bias voltage: 1.3pF typical (VR = 0 to 2.5V)
- Working voltage: 2.5V
- 固态硅雪崩技术
- 10/100/1000 ethernet
- 集成磁性元件/RJ-45 连接器
- LAN/WAN equipment
- Security cameras
- 工业控制
- Notebooks and desktop computers
应用
封装
- 2.0 x 1.0 x 0.4 mm
订购代码
- uClamp2512T.TCT
Pb(Lead)-Free/RoHS-Green Info
Datasheets & Documentation
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