GN7068
The GN7068 is an extended-capability transimpedance amplifier die and is designed for use with a 10G APD.
The GN7068 design is implemented such that electro-optic gain is well controlled for maximum RF stability in the user's package. The GN7068 is intended to offer careful RF matching of photodiode and TIA for optimized performance.
功能
- 功耗:94mW(典型值)
- Designed for use with 0.2pF APD
- Typical transimpedance gain 3.25kΩ
- Bandwidth (-3dB): 12GHz
- 可在 OC-192 / STM-64 上运行,NRZ 速率高达 14.5 Gbps
- On-chip VCC decoupling
- 工作结温范围:-40 ℃ 至 125 ℃
- 10 G EPON ONU
- 高达 14.5 Gbps 的串行数据系统
应用
订购代码
- Part NumberPackageXN7068Bare Die
- Shipped in waffle pack
Pb(Lead)-Free/RoHS-Green Info
Base Part Number (1)
GN7068
产品描述
GN7068 10GBPS TIA FOR PON APPLICATIONS
引脚数
17
封装类型
BARE DIE
Pb-Free (2)
是
Reflow Temp °C (3)
260
引脚或焊球镀层
MATTE Sn
MSL 等级
1
JIG 101 A & B (12)
是
WEEE 2012/19/EU (19)
是
China RoHS 2 GB/T 26572-2011
是下载报告
RoHS Compliant by Exception (8)
否
Whisker Testing (10)
热循环锡须测试
(-40°C 至 +85°C / 4000 循环)
(-40°C 至 +85°C / 4000 循环)
是
环境温度存储,锡须测试
(50°C,4000 小时)
(50°C,4000 小时)
是
60°C/90% 相对湿度 4000 小时,锡须测试
是
声明和报告
IPC-1752-2
Related Parts
GN7068-CHIP
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